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如何对MOS 做IEC 60335-1 A2 cl 19.11.2 g)的测试？
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节示标准如下：/ c8 h$ _, z8 P* e
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19.11.2 g) failure of an electronic power switching device in a partial turn-on mode with loss of gate (base) control. During this test, winding temperatures shall no exceed the values give in 19.7.; `, I- i9 \! R4 V! `+ V/ l1 a# W* G
/ Q1 i' G9 A* mNOTE 3 This mode may be simulated by disconnecting the electronic power switching device gate (base) terminal and connecting an external adjustable power supply between the gate (base ) terminal and the source (emitter) terminal of the electronic power switching device. The power supply is then varied so as to achieve a current that will not damage the electronic power switching device but give the most onerous conditions of test.0 b1 ]: B m' ?
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W" S. s2 g0 Z* ~, S标准的意思:9 A4 ~) a/ x5 [2 Q! X
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将MOS管的栅级断开再外加电源为MOS管供电，目的是要模拟出既要MOS不烧坏又要出现发热的最严酷的情况。标准上只是说了个原则上是：既要MOS不烧坏又要出现发热的最严酷的情况.
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但是实际操作比较困难!
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9 i- C2 f7 |: c+ s5 U2 S. H V那位大佬有没有比较好的办法分享一下? 谢谢! |
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发表于 2010-7-18 09:12
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